• 洁净无尘：真空环境可大幅减少气体分子对工艺腔室的污染，半导体制造要求在超高真空（压力低于10⁻⁷ Pa）下进行，以避免单个尘埃颗粒导致整个芯片报废。

• 自由程控制：真空度决定了粒子的平均自由程。在高真空下，溅射原子或蒸发分子可直线飞行至基板而不发生碰撞，保证了薄膜沉积的均匀性和方向性。

• 等离子体赋能：通过真空环境中的气体放电产生等离子体，可在低温条件下实现沉积、刻蚀等热力学上难以进行的过程，这是PVD、CVD、ALD和刻蚀工艺的物理基础。

• 精准传输：在真空中，电子和离子的运动不受气体分子散射阻碍。这一特性催生了真空沟道晶体管等新型器件，其电子迁移率远超传统半导体。

• Clean and Dust-Free: A vacuum environment greatly reduces contamination of process chambers by gas molecules. Semiconductor manufacturing requires ultra-high vacuum (pressure below 10⁻⁷ Pa) to prevent entire chips from being scrapped due to a single dust particle.

  
  

• Mean Free Path Control: Vacuum level determines the mean free path of particles. Under high vacuum, sputtered atoms or evaporated molecules travel straight to the substrate without collision, ensuring uniformity and directionality in thin-film deposition.

  
  

• Plasma Activation: Plasma generated via gas discharge in a vacuum enables thermodynamically difficult processes such as deposition and etching at low temperatures. This serves as the physical foundation for PVD, CVD, ALD, and etching processes.

  
  

• Precise Transport: In a vacuum, the movement of electrons and ions is not hindered by scattering from gas molecules. This characteristic has spurred the development of novel devices such as vacuum channel transistors, whose electron mobility far exceeds that of conventional semiconductors.

• 低/中真空（10⁵～10⁻¹ Pa）：用于物料传输、粗抽排气等辅助工序。

• 高真空（10⁻¹～10⁻⁵ Pa）：主流薄超高真空（10⁻⁵～10⁻⁹ Pa）：用于分子束外延（MBE）等对纯净度要求极高的工艺。

• 极高真空（<10⁻⁹ Pa）：用于前沿科研和特殊器件制备。

• Low / Medium Vacuum (10⁵ ~ 10⁻¹ Pa): Used in auxiliary processes such as material transfer and rough pumping/exhaust.

• High Vacuum (10⁻¹ ~ 10⁻⁵ Pa): The operating range for mainstream thin-film deposition and etching processes. The global market size of semiconductor high-vacuum equipment was approximately USD 5.22 billion in 2024.

• Ultra-High Vacuum (10⁻⁵ ~ 10⁻⁹ Pa): Used in processes requiring extremely high purity, such as Molecular Beam Epitaxy (MBE).

• Extremely High Vacuum (< 10⁻⁹ Pa): Used in cutting-edge scientific research and the fabrication of special devices.

• 金属化薄膜：如铜互连中的阻挡层（Ta/TaN）、铝电极等。

• 介质薄膜：如SiO₂、Si₃N₄、High-k材料（HfO₂）等，用于栅介质和层间绝缘。

• 硬质保护膜：如TiN、TiAlN、CrN等，不仅用于刀具涂层，在半导体设备关键零部件的耐磨防护中也广泛应用。

• Metallic thin films: such as barrier layers (Ta/TaN) and aluminum electrodes in copper interconnection.

• Dielectric thin films: such as SiO₂, Si₃N₄, and High‑k materials (HfO₂), used for gate dielectrics and interlayer insulation.

• Hard protective films: such as TiN, TiAlN, CrN, etc. They are not only applied in cutting tool coatings but also widely used for wear-resistant protection of key components in semiconductor equipment.

• 真空获得技术：包含各类真空泵（干泵、分子泵、低温泵）的优化组合，为工艺腔室提供稳定、洁净的真空环境。

• 真空度精密测量与控制：通过真空规（电容膜片规、热导规、电离规）实时监测压力，并结合阀门调节实现工艺压力的闭环控制。

• 等离子体发生与控制：通过射频电源、直流电源在真空中激发等离子体，控制离子能量和密度，以调控薄膜的微观结构和性能。

• 衬底温度控制：在薄膜沉积中精确控制晶圆温度，影响薄膜的应力、致密度和结晶取向。

• Vacuum Generation Technology: Includes the optimized combination of various vacuum pumps (dry pumps, turbomolecular pumps, cryopumps) to provide a stable and clean vacuum environment for process chambers.

• Precision Measurement and Control of Vacuum Level: Real-time pressure monitoring via vacuum gauges (capacitance manometers, thermal conductivity gauges, ionization gauges), combined with valve regulation to achieve closed-loop control of process pressure.

• Plasma Generation and Control: Plasma excitation in a vacuum via RF power supplies and DC power supplies, with control over ion energy and density to regulate the microstructure and properties of thin films.

• Substrate Temperature Control: Precise control of wafer temperature during thin-film deposition, which affects film stress, density, and crystal orientation.

• 薄膜均匀性：300mm晶圆上膜厚偏差可控制在1%以内，这是良率的核心保障。

• 台阶覆盖率：先进工艺要求薄膜在具有高深宽比的沟槽或通孔侧壁实现连续均匀覆盖，ALD技术在此方面表现卓越。

• 杂质控制：真空环境可有效降低薄膜中的氧、碳等杂质含量，提升器件可靠性。

• 界面陡峭性：多层膜结构要求层间界面清晰、互扩散极小，这对真空换气和抽速提出极高要求。

• Thin Film Uniformity: The film thickness variation on a 300 mm wafer can be controlled within 1%, which serves as a core guarantee for yield.

• Step Coverage: Advanced processes require thin films to achieve continuous and uniform coverage on the sidewalls of trenches or vias with high aspect ratios, for which ALD technology demonstrates outstanding performance.

• Impurity Control: The vacuum environment can effectively reduce the content of impurities such as oxygen and carbon in thin films, improving device reliability.

• Interface Abruptness: Multilayer film structures require clear interlayer interfaces with minimal interdiffusion, which imposes extremely high requirements on vacuum gas exchange and pumping speed.

根据QYResearch数据，2025年全球半导体真空件市场销售额达到40.46亿美元，预计到2031年将增长至56.29亿美元，年复合增长率（CAGR）为5.70%。另一份市场报告显示，仅高真空设备市场在2026年预计为52.2亿美元，到2034年有望达到91亿美元，CAGR高达7.2%。

产业链核心环节：真空技术贯穿半导体制造全流程——从硅片制备、薄膜沉积、刻蚀到封装测试，每颗芯片的诞生都离不开数十次真空工艺循环。

国产替代关键赛道：当前高端真空泵、真空阀、流量计等核心零部件仍由欧美日企业主导（如Edwards、VAT、MKS、Horiba等），国产化率不足10%，是半导体设备自主可控的重要突破口。

支撑万亿级产业：作为半导体产业的“使能技术”，真空系统虽仅占设备总成本的10%—15%，但其性能和稳定性直接影响芯片良率和产能，间接撬动数千亿美元的集成电路市场。

Core Link in the Industrial Chain

Vacuum technology runs through the entire semiconductor manufacturing process — from wafer preparation, thin-film deposition and etching to packaging and testing. The production of every chip relies on dozens of vacuum process cycles.

Key Track for Domestic Substitution

At present, core components such as high-end vacuum pumps, vacuum valves and flow meters are still dominated by European, American and Japanese manufacturers (including Edwards, VAT, MKS, Horiba, etc.), with a domestic production rate of less than 10%. It represents a critical breakthrough for achieving independent control of semiconductor equipment.

Supporting the Trillion-Dollar Industry

As an "enabling technology" for the semiconductor industry, vacuum systems account for only 10%–15% of the total equipment cost, yet their performance and stability directly affect chip yield and production capacity, indirectly driving the multi-hundred-billion-dollar integrated circuit market.

当前半导体真空技术正经历从“辅助工具”向“核心工艺引擎”的角色跃迁。随着芯片制程推进至3nm及以下，对真空环境的洁净度、稳定性以及工艺控制精度的要求已达到前所未有的高度。同时，国内真空产业在政策支持和市场需求双轮驱动下快速成长，但在高端产品领域与国际先进水平仍有差距。

技术壁垒高筑：半导体级真空零部件对材料、加工精度、表面处理要求极高，验证周期长达2～3年，新进入者门槛极高。

供应链依赖：核心部件如涡轮分子泵、耐腐蚀真空计、超洁净阀门等严重依赖进口，地缘政治风险加剧供应链不确定性。

人才储备不足：真空技术涉及物理、材料、机械、控制等多学科交叉，复合型高端人才稀缺。

High technical barriers: Semiconductor-grade vacuum components have extremely high requirements for materials, machining precision, and surface treatment, with a verification cycle of 2–3 years, creating a very high entry barrier for new players.

Supply chain dependence: Core components such as turbomolecular pumps, corrosion-resistant vacuum gauges, and ultra-clean valves rely heavily on imports, and geopolitical risks have increased supply chain uncertainty.

Insufficient talent pool: Vacuum technology involves interdisciplinary integration of physics, materials science, mechanical engineering, automation control and other fields, resulting in a shortage of compound high-end talents.

真空与AI深度融合：智能真空控制系统通过实时数据采集与机器学习算法，实现工艺压力自适应调节，提升设备利用率和良率。

工艺集成化：集群式设备（Cluster Tool）将多个真空工艺腔室集成在同一平台上，减少晶圆在大气环境中的暴露和传输时间。

绿色真空技术：节能型干泵、低温泵以及尾气处理系统的普及，降低半导体制造的高能耗和高温室气体排放。

新器件驱动新需求：纳米级真空沟道器件、量子计算等新兴领域对超高/极高真空环境的需求，将牵引真空技术向新极限迈进。

Deep integration of vacuum technology and AI: Intelligent vacuum control systems achieve adaptive adjustment of process pressure through real-time data acquisition and machine learning algorithms, improving equipment utilization and yield.

Process integration: Cluster tools integrate multiple vacuum process chambers on a single platform, reducing wafer exposure and transfer time in atmospheric environments.

Green vacuum technology: The widespread adoption of energy-saving dry pumps, cryopumps and exhaust treatment systems reduces high energy consumption and greenhouse gas emissions in semiconductor manufacturing.

New devices driving new demands: The demand for ultra-high / extreme-high vacuum environments in emerging fields such as nanoscale vacuum channel devices and quantum computing will push vacuum technology to new limits.